| PART |
Description |
Maker |
| CR8PM CR8PM-12 |
12.56 A, 600 V, SCR
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
ITT, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
POWEREX[Powerex Power Semiconductors]
|
| HER107G HER103G HER101G |
High Efficiency Rectifier Glass Passivation Junction
|
Weitron Technology
|
| CR20F |
MEDIUM POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| CR20F |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR03AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR12BM |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR25A BCR25B |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR3CM |
Low Power Use Non-Insulated Type / Glass Passivation Type
|
Mitsubishi Electric
|
| BCR10UM |
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR3AMZ |
HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR6PM-12 CR6PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
