| PART |
Description |
Maker |
| NPSS40 |
Improved glass passivation for high reliability
|
Naina Semiconductor ltd.
|
| CR8PM CR8PM-12 |
12.56 A, 600 V, SCR
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
ITT, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
POWEREX[Powerex Power Semiconductors]
|
| CR8AM |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
MEDIUM POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR16UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR12BM |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR25A BCR25B |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR10UM |
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR16HM |
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
|
| CR3AMZ |
HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR3JM |
HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR8PM-12 CR8PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
