| PART |
Description |
Maker |
| GLT5640AL16 GLT5640AL16-10TC GLT5640AL16-5.5TC GLT |
4M X 16 CMOS Synchronous Dynamic RAM
|
ETC[ETC]
|
| MB81117422A-125 |
CMOS 2×2M ×4 Bit
Synchronous Dynamic RAM(CMOS 2×2M ×4 位同步动态RAM)
|
Fujitsu Limited
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| VG37648041AT |
256M:x4, x8, x16 CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| HM5216808CSERIES 5216808C |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
From old datasheet system
|
hitachi
|
| MD56V62400H MD56V62400 |
4-Bank x 4194304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM
4-Bank x 4,194,304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic components
OKI[OKI electronic componets]
|
| IS42S32800B-7T IS42S32800B-6T IS42S32800B-6BI IS42 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| GLT4160L04S-50J3 GLT4160L04S-50TC GLT4160L04SE-60T |
60ns; 4M x 4 CMOS dynamic RAM with extended data output
40ns; 4K x 4 CMOS dynamic RAM with extended data output
50ns; 4M x 4 CMOS dynamic RAM with extended data output
|
List of Unclassifed Manufacturers
G-LINK Technology
|
| K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48V8100B |
8M x 8Bit CMOS Dynamic RAM with Fast Page Mode(8M x 8浣?CMOS ?ㄦ?RAM(甯?揩??〉妯″?))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MK31VT864A-8YC |
8388608 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(8M字64位同步动态RAM模块)
8388608 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(8M字4位同步动态RAM模块)
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
|
