| PART |
Description |
Maker |
| 2SC5232 E007767 |
NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
From old datasheet system
GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
| HN1C03FUTE85R |
For Muting And Switching Applications
|
Toshiba Semiconductor
|
| RN1441 RN1444 E002624 |
MUTING AND SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba
|
| 2SC287807 2SC2878 |
Silicon NPN Epitaxial Type For Muting and Switching Applications
|
Toshiba Semiconductor
|
| 2SC421307 2SC4213 |
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
Toshiba Semiconductor
|
| 2SA1955 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SA1954 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SC5376F |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
| HN4C05JU |
MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC5376F |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications
|
TOSHIBA
|
| RN1304 RN1306 RN1302 RN1303 RN1305 RN1301 RN1303TE |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications
Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2SC3327 2SC3327B |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS
|
TOSHIBA
|
