| PART |
Description |
Maker |
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| IZD2160-17 IZD1400-37 IGD1625-10 |
2160 A, 1700 V, SILICON, RECTIFIER DIODE
1625 A, 1000 V, SILICON, RECTIFIER DIODE
|
Electronic Theatre Controls, Inc.
|
| MN3611 |
2160-Bit CCD Linear Image Sensor
|
Panasonic Semiconductor
Matsushita Electric Industrial Co Ltd
|
| 5800-123-RC 5800-102-RC 5800-152-RC 5800-121-RC 58 |
High I , Axial Choke 1 ELEMENT, 12000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
RF Choke; Series:5800; Inductance:1mH; Inductance Tolerance: /- 10 %; Terminal Type:Axial Leaded; Core Material:Ferrite; Current Rating:0.2A; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Resistance:2.3ohm
RF Choke; Series:5800; Inductance:1.5mH; Inductance Tolerance: /- 10 %; Terminal Type:Axial Leaded; Core Material:Ferrite; Current Rating:0.158A; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Resistance:3.45ohm
RF Choke; Series:5800; Inductance:120uH; Inductance Tolerance: /- 10 %; Terminal Type:Axial Leaded; Core Material:Ferrite; Current Rating:0.508A; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Resistance:0.283ohm
VW-1 rated shrink tubing to cover winding
|
Bourns, Inc.
BOURNS INC
Bourns Electronic Solutions
Bourns Electronic Solut...
|
| PS12-03-455/1S |
5800 MHz - 6400 MHz RF/MICROWAVE SPLITTER, 1.6 dB INSERTION LOSS
|
HIROSE ELECTRIC Co., Ltd.
|
| XQ1001-BD-000V XQ1001-BD-EV1 |
5.8-6.9 GHz GaAs MMIC Voltage Controlled Oscillator VCO, 5800 MHz - 6900 MHz
|
Mimix Broadband, Inc.
MIMIX BROADBAND INC
|
| LT3689HMSEPBF |
700mA Step-Down Regulator with Power-On Reset and Watchdog Timer; Package: 16-MSOP; Temperature Range: –40°C to 150°C 1.95 A SWITCHING REGULATOR, 2160 kHz SWITCHING FREQ-MAX, PDSO16
|
Linear Technology, Corp.
|
| CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8
80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial
80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| 1N5361BG 1N5361BRLG 1N5338BG 1N5338BRLG 1N5388BRLG |
5 Watt Silicon Zener Diode(120V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(200V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(150V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(140V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(110V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(100V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(68V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(60V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(62V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(56V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Surmetic TM 40 Zener Voltage Regulators
|
ONSEMI[ON Semiconductor]
|
| 1N1341B 1N1585 1N1587 1N1068 1N1064 1N2232A 1N2232 |
SILICON POWER RECTIFIER 16 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 150 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA
Standard Rectifier (trr more than 500ns)
N/A
SILICON POWER RECTIFIER
|
MICROSEMI CORP-LAWRENCE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 1N4748A 1N4732A 1N4758A 1N4745A 1N4754A 1N4744A 1N |
Silicon Power Z-Diode for Voltage Stabilization(稳定电压22V，稳定电1.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电2V的，稳定电流一十一点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.9V，稳定电4mA的硅功率齐纳二极 硅功Z -二极管的电压稳定（稳定电压均.9V，稳定电流六十四毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压16V，稳定电5.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电6V的稳定电流一十五点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压9.1V，稳定电8mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.1V，稳定电8毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压12V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的稳定电压12V的稳定电压，稳定电流21毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压75V，稳定电.3mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电5V的，稳定电流三点三毫安的硅功率齐纳二极管
Silicon Power Z-Diodes 硅功率Z -二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压13V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电3V的，稳定电流十九毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压20V，稳定电2.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电0V的，稳定电流十二点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压8.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电流三一毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压6.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电1毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.6V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.6V的稳定电9毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压4.7V，稳定电3mA的硅功率齐纳二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压5.1V，稳定电9mA的硅功率齐纳二极
From old datasheet system
Silicon Power Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| EFM301L EFM302L EFM303L EFM304L EFM305L EFM306L EF |
3 A, 150 V, SILICON, RECTIFIER DIODE
3 A, 600 V, SILICON, RECTIFIER DIODE
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Ampere
3 A, 200 V, SILICON, RECTIFIER DIODE
|
RECTRON LTD
Rectron Semiconductor
|
|
