| PART |
Description |
Maker |
| STL23NM50N |
N-channel 500 V, 0.170 typ., 14 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package
|
STMicroelectronics
|
| P5KE6.0 P5KE6.0A P5KE6.5 P5KE6.5A P5KE14A P5KE14 P |
500 Watt Transient Voltage Suppressors 5.0 to 170 Volts 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
|
Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
Micro Commercial Compon...
|
| STD3PK50Z |
P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH Power MOSFET in a DPAK package
|
STMicroelectronics
|
| STD8NM50N STP8NM50N STF8NM50N STU8NM50N |
N-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in IPAK
N-channel 500 V, 0.73 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packages
N-channel 500 V, 0.73 Ω typ., 5 A MDmesh?II Power MOSFET in DPAK, TO-220 and IPAK packages
|
ST Microelectronics
STMicroelectronics
|
| S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
| STL40C30H3LL |
N-channel 30 V, 0.019 Ohm typ., 10 A, P-channel 30 V, 0.024 Ohm typ., 8 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 d. i. package
|
ST Microelectronics
|
| BSS123LT3G BSS123LT1 BSS123LT1D BSS123LT1G BSS123L |
Power MOSFET 170 mAmps, 100 Volts N-Channel SO-23(170 mA, 100 V，N通道SOT3封装的功率MOSFET)
TMOS FET Transistor
|
ONSEMI[ON Semiconductor]
|
| UMA8.0A UMA8.0CA UMA85CA UMA60A UMA9.0CA UMA7.5CA |
ULTRAMITE SURFACE MOUNT 500 WATT TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 V
|
http://
MICROSEMI[Microsemi Corporation]
|
| 2SA1256 |
High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ).
|
TY Semiconductor Co., Ltd
|
| S2744 S2744-08 S2744-09 S3588-08 S3588-09 |
MOSFET, Switching; VDSS (V): 150; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.089; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
|
Hamamatsu Photonics K.K.
|
| PPF450M |
N Channel MOSFET; Package: TO-254; ID (A): 8; RDS(on) (Ohms): 0.42; PD (W): 150; BVDSS (V): 500; Rq: 0.83; 12 A, 500 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
