PART |
Description |
Maker |
MBRT120100R MBRT12045 MBRT12045R MBRT12060 |
Silicon Power Schottky Diod
|
GeneSiC Semiconductor, ...
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NTLJF1103P NTLJF1103PT1G |
Power MOSFET Schottky Diode Power MOSFET and Schottky Diode -8 V, -4.3 A, μCool? P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN
|
ON Semiconductor
|
UL1970N UL1970 |
Ukad sterujcy punktowym wskanikiem zoonym z diod wieccych OBUDOWA CE 71
|
Ultra CEMI ETC
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IRG4BC15UD-LPBF IRG4BC15UD-SPBF IRG4BC15UD-L IRG4B |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
|
International Rectifier
|
FDFS2P102 FAIRCHILDSEMICONDUCTORCORP-FDFS2P102 FDF |
Integrated P-Channel MOSFET and Schottky Diode FETKEY P-Channel MOSFET with Schottky Diode 3.3 A, 20 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
NTLUF4189NZ NTLUF4189NZTAG NTLUF4189NZTBG |
Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package
|
ON Semiconductor
|
AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET HEXFET庐 Power MOSFET HEXFET? Power MOSFET 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Ultra Low On-Resistance
|
International Rectifier List of Unclassifed Man...
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NTLJD3182FZ NTLJD3182FZTAG NTLJD3182FZTBG |
Power MOSFET and Schottky Diode −20 V, −4.0 A, μCool Single P−Channel & Schottky Barrier Diode, ESD Power MOSFET and Schottky Diode −20 V, −4.0 A, 楼矛Cool垄芒 Single P−Channel & Schottky Barrier Diode, ESD
|
ON Semiconductor
|
DMG4710SSS-13 |
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE 8.8 A, 30 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC, SOP-8
|
Diodes Incorporated Diodes, Inc.
|
AM29DL800BT70RWBC AM29DL800BB70RSI AM29DL800BT70RS |
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU9343-701 with Lead-Free packaging -20V Single P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7404 with Lead Free Packaging x8/x16闪存EEPROM -100V Single P-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR5410 with Standard Packaging x8/x16闪存EEPROM 30V FETKY - MOSFET and Schottky Diode in a SO-8 package; A IRF7807D2 with Standard Packaging x8/x16闪存EEPROM x8/x16 Flash EEPROM x8/x16闪存EEPROM 30V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7807VD1 with Lead Free Packaging
|
Advanced Micro Devices, Inc.
|
IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. Vishay Intertechnology, Inc.
|
WPM2006 WPM2006-6TR |
Power MOSFET and Schottky Diode
|
TY Semiconductor Co., Ltd
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