| PART |
Description |
Maker |
| CMFSH-3I |
SMD Schottky Diode Dual: High Current: Same Polarity
DUAL, ISOLATED SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| CMPSH05-4C |
SMD Schottky Diode Dual: Common Cathode
SURFACE MOUNT DUAL, COMMON CATHODE HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE
|
Central Semiconductor Corp
|
| IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| NTMSD3P303R2_06 NTMSD3P303R2 NTMSD3P303R2G NTMSD3P |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package
|
ONSEMI[ON Semiconductor]
|
| BAT240A |
Silicon Schottky Diode (Rectifier Schottky diode for modem applications High reverse voltage For power supply)
|
SIEMENS A G
SIMENS
Siemens Semiconductor Group
|
| NTMSD2P102LR2 |
FETKY®
Power MOSFET and Schottky Diode Dual SO-8 Package(双通道SO-8封装的功率MOSFET与肖特基二极
|
ON Semiconductor
|
| NTHD4N02F NTHD4N02FT1G NTHD4N02FT1 NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™
|
ON Semiconductor
|
| BAT65 Q62702-A990 |
Silicon Schottky Diode (Low-power Schottky rectifier diode)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 5082-2277 |
SCHOTTKY BARRIER DUAL DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S-C BAND, MIXER DIODE
|
ASI
Advanced Semiconductor, Inc.
|
