PART |
Description |
Maker |
T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T2G6001528-Q3 |
18W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
CGH35060F1-AMP |
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
|
Cree, Inc
|
CGH27030F-AMP CGH27030F-TB |
30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
|
Cree, Inc
|
0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦,28V的,1 GHz的LDMOS的场效应 30 Watt / 28V / 1 Ghz LDMOS FET 30 WATT 28V 1 GHz LDMOS FET 30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
TGA2611 |
2-6 GHz GaN LNA
|
TriQuint Semiconductor
|
TGA2612-SM-15 |
6 to 12 GHz GaN LNA
|
TriQuint Semiconductor
|
TGA2611-SM-15 |
2 6 GHz GaN LNA
|
TriQuint Semiconductor
|
MGFS45B2527B |
2.5-2.7 GHz BAND / 30W
|
Mitsubishi Electric Semiconductor
|
MGFS45V2527A MGFS45V2527A11 |
2.7-3.5 GHz BAND / 30W
|
Mitsubishi Electric Semiconductor
|
TGA2958 |
13 to 18 GHz 2W GaN Driver Amplifier
|
TriQuint Semiconductor
|
TGA2622-CP TGA2622-CP-15 |
9 to 10 GHz 35 W GaN Power Amplifier
|
TriQuint Semiconductor
|