| PART |
Description |
Maker |
| GP1S58VJ000F |
Gap : 5mm, Slit : 0.5mm Phototransistor Output, Case package Transmissive Photointerrupter
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SHARP[Sharp Electrionic Components]
|
| GP1A50HRJ00F |
Gap : 3mm, Slit : 0.5mm OPIC Output Case package Transmissive Photointerrupter
|
SHARP[Sharp Electrionic Components]
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| GP1L52VJ000F |
Gap : 3mm, Slit : 0.5mm Darlington Phototransistor Output, Case package Transmissive Photointerrupter
|
SHARP[Sharp Electrionic Components]
|
| S469-0060-50 S469-0010-200 S469-0080-100 |
10 TAP 14 PIN DIP PASSIVE DELAY MODULES PASSIVE DELAY LINE, TRUE OUTPUT, PDSO14
|
Bel Fuse, Inc.
BEL FUSE INC
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| MCRF200I_1M14D MCRF200I1M14D MCRF200I_SN00A MCRF20 |
The MCRF200 is a low cost one time contactlessly programmable passive Radio Frequency Indentification (RFID) IC device for low frequency applications (100 kMz - 400 kMz). The device has a total of 128 bits of memory and can be configured w
125 kHz microID⑩ Passive RFID Device
125 kHz microID Passive RFID Device
125 kHz microID?/a> Passive RFID Device
AC 4C 4#8 SKT PLUG
ER 19C 19#16 SKT PLUG
125 kHz microIDPassive RFID Device 125千赫microID⑩无RFID器件
125 kHz microIDPassive RFID Device 125千赫microID⑩无源RFID器件
125 kHz microID?Passive RFID Device
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MICROCHIP[Microchip Technology]
Microchip Technology Inc.
Microchip Technology, Inc.
|
| 91000TA47 91000TA48 91000TA49 91000TC22 91000T101 |
SCHUTZKAPPE FUER SCHALTSYSTEM 30.5MM
LENS PUSHBUTTON GREEN 镜头绿色按钮
DRUCKSCHALTER IP55 30.5MM DRUCKSCHALTER等级IP55 30.5MM
|
TE Connectivity, Ltd.
|
| X0202MA X0202MA1BA2 X0202MA2BL2 X0202MA5BA4 X0202M |
1.25A SCRs
Supercapacitor; Capacitance:3.3F; Series:EDL; Voltage Rating:2.3VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Radial; Termination:Radial Leaded; ESR:0.3ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes 1.25A的可控硅
1.25A SCRs 1.25A的可控硅
MICA RoHS Compliant: No
CAT 5E SOLID PLNM CBL STRGHT PIN,350MHZ-GREEN
Supercapacitor; Capacitance:1F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes
Supercapacitor; Capacitance:0.047F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
Supercapacitor; Capacitance:0.022F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:150ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes
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http://
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 30KPA54A 30KPA84A 30KPA84C 30KPA132CA 30KPA43 30KP |
Diode TVS Single Uni-Dir 54V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 84V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 84V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 43V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 30V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 320V 30KW 2-Pin
Diode TVS Single Uni-Dir 400V 30KW 2-Pin Case P-600
Diode TVS Single Bi-Dir 30V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 42V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 51V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 51V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 58V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 72V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 198V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 72V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 71V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 66V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 66V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 108V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 108V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 102V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 102V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 78V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 78V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 198V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 64V 30KW 2-Pin Case P600 T/R
|
New Jersey Semiconductor
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
|
http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| LBE66B1 LBE66B1B LBE66B1CB LBE66B1U LBE66B2 LBE66B |
HEAT DISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS
|
List of Unclassifed Manufac...
List of Unclassifed Man...
|
| MCRF250 MCRF250-I_WFQ23 MCRF250-I_P MCRF250-I_S MC |
The MCRF250 is one time contactlessly programmable passive Radio Frequency Identification (RFID) IC device with advanced anti-collision features. The device is powered by an external RF transmitter (reader) through inductive coupling. The
125 kHz microID Passive RFID Device with Anti-Collision
From old datasheet system
|
MICROCHIP[Microchip Technology]
|
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