| PART |
Description |
Maker |
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
| CLF1G0060S-30 CLF1G0060-30 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| TGF2023-10 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| GTVA220701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| TGF2023-05 |
25 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MAGX-000035-030000 MAGX-000035-SB1PPR MAGX-000035- |
GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| MGF0843G |
High-power GaN HEMT (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0846G |
High-power GaN HEMT (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0840G |
High-power GaN HEMT (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MAGX-002731-SB1PPR MAGX-002731-030L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
