| PART |
Description |
Maker |
| PMV185XN |
30 V, single N-channel Trench MOSFET Very fast switching Low RDSon
|
TY Semiconductor Co., Ltd
|
| Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| AM2321P |
Low rDS(on) trench technology Low thermal impedance
|
TY Semiconductor Co., Ltd
|
| IRGPS4067DPBF |
Low VCE (on) Trench IGBT Technology
|
International Rectifier
|
| AUIRGPS4070D0 |
Low VCE (on) Trench IGBT Technology
|
Infineon Technologies A...
|
| FDG330P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., L...
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| V23990-P630-A44-PM |
Trench Fieldstop Technology IGBT4 for low saturation loss
|
Vincotech
|
| FDD3860 FDD386008 |
N-Channel PowerTrench MOSFET 100V, 29A, High performance trench technology for extremely low
|
Fairchild Semiconductor
|
| IKB06N60T |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| PMV16UN |
20 V, 5.8 A N-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., Ltd
|
