PART |
Description |
Maker |
ESD5342N ESD5342N-3/TR |
2-Lines, Uni-directional, Low Capacitance Transient Voltage Suppressor
|
Will Semiconductor Ltd.
|
ESD5306D ESD5306D-10/TR |
6-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors
|
Will Semiconductor Ltd.
|
ESD5302F-3/TR |
2-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors
|
Will Semiconductor Ltd.
|
ESD5304D |
4-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors
|
TY Semiconductor Co., L...
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30KPA54A 30KPA84A 30KPA84C 30KPA132CA 30KPA43 30KP |
Diode TVS Single Uni-Dir 54V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 84V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 84V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 43V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 30V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 320V 30KW 2-Pin Diode TVS Single Uni-Dir 400V 30KW 2-Pin Case P-600 Diode TVS Single Bi-Dir 30V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 42V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 51V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 51V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 58V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 72V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 198V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 72V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 71V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 66V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 66V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 108V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 108V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 102V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 102V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 78V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 78V 30KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 198V 30KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 64V 30KW 2-Pin Case P600 T/R
|
New Jersey Semiconductor
|
K1S321615M K1S321615M-E K1S321615M-EE10 |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet 2Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic Samsung semiconductor
|
AT93C46 AT93C46-10PC AT93C46-10PC-1.8 AT93C46-10PC |
3-Wire Serial EEPROMs 3线串行EEPROM 3-Wire Serial EEPROMs 128 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 CONN UHF JACK 4 HOLE FLANGE MT 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 122 x 32 pixel format, Compact LCD size 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 3-Wire Serial EEPROMs 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 3-Wire Serial EEPROMs 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 3-Wire Serial EEPROMs 128 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 128 x 64 pixel format, LED or EL Backlight available 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 DC-DC Converter; Supply Voltage:36V; Output Voltage:3.3V; Number of Outputs:1; Power Rating:100W; Mounting Type:PC Board; Series:Eighth-Brick; Efficiency:90%; Leaded Process Compatible:Yes; Output Current:20A RoHS Compliant: Yes SH2 Series, 7606 Group, UBC, SDRAM, PCMCIA, Host I/F, 2-ch CMT, 16KB unified 4 way set associative cache BP-176V; Vcc= 3.0 to 3.6 volts, Temp= -40 to 85 C; Package: PLBG0176GA-A SH2 Series, 7606 Group, UBC, SDRAM, PCMCIA, Host I/F, 2-ch CMT, 16KB unified 4 way set associative cache BP-176V; Vcc= 3.0 to 3.6 volts, Temp= -20 to 75 C; Package: PLBG0176GA-A -3-Wire Serial EEPROMs 3-WireSerialEEPROMs 3-Wire Serial EEPROMs
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
3SMC6.5A 3SMC7.0A 3SMC9.0A |
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电.5V,单向玻璃钝化节点瞬变电压抑制 Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电6.5V,单向玻璃钝化节点瞬变电压抑制 Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电7.0V,单向玻璃钝化节点瞬变电压抑制 Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(??ぇ???宸ヤ??靛?.0V,????荤???????????靛??????
|
Central Semiconductor Corp.
|
30KP90A 30KP320A 30KP360A |
Diode TVS Single Uni-Dir 90V 30KW 2-Pin Case 5A Diode TVS Single Uni-Dir 320V 30KW 2-Pin Case D-6 Diode TVS Single Uni-Dir 360V 30KW 2-Pin Case D-6
|
New Jersey Semiconductors
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