| PART |
Description |
Maker |
| FM22LD16-13 |
4Mbit F-RAM Memory
|
Cypress Semiconductor
|
| FM22LD16-55-BG FM22LD16-55-BGTR |
4Mbit F-RAM Memory
|
Cypress Semiconductor
|
| FM22LD16-55-BGTR FM22LD1609 FM22LD16 |
4Mbit F-RAM Memory
|
Ramtron International C...
Ramtron International Corp.
Ramtron International Corporation
|
| LH28F004SU LH28F400SUHE-NC80 LH28F400SU |
4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory
4M (512K x 8) flash memory
4Mbit(512Kbit x 8/ 256 Kbit x 16) 5V Single Voltage Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| M76DW52004TA M76DW52004TA70Z M76DW52004TA70ZT |
32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
|
ST Microelectronics
|
| F25L004A |
4Mbit (512Kx8) 3V Only Serial Flash Memory
|
Elite Semiconductor Memory Technology Inc.
|
| UN1221 UN1222 UN1223 UN1224 |
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Silicon NPN epitaxial planer transistor
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| AT25F409606 AT25F4096Y4-10YH-2.7 AT25F4096 AT25F40 |
4Mbit High Speed SPI Serial Flash Memory
|
ATMEL[ATMEL Corporation]
|
| M39432 |
Single Chip 4Mbit Flash and 256Kbit Parallel EEPROM Memory(单片4Mb闪速和256Kb并行EEPROM)
|
意法半导
|
| MB84VA2000-10 MB84VA2001-10 MB84VA2000 |
(MB84VA2000 / MB84VA2001) 8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM
8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA48
|
Fujitsu Media Devices
Fujitsu, Ltd.
Fujitsu Component Limited.
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
