| PART |
Description |
Maker |
| RJH1CM5DPQ-E0 |
1200V - 15A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| AOT15B60D |
600V, 15A Alpha IGBT with Diode
|
Alpha & Omega Semiconductors
|
| 15ETH06 15ETH06-1 15ETH06S 15ETH06FP |
Hyperfast Rectifier Hyperfast整流
600V 15A Hyperfast Discrete Diode in a TO-220 FullPack package 600V5A条Hyperfast分立二极管采TO - 220 FullPack
600V 15A HyperFast Discrete Diode in a TO-220AC package
600V 15A HyperFast Discrete Diode in a TO-262 package
600V 15A HyperFast Discrete Diode in a D2-Pak (UltraFast) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| PS21964-4S |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| RJH60D1DPE-15 |
600V - 10A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60A83RDPE-15 |
600V - 10A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60D1DPP-E0-15 |
600V - 10A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJP60V0DPM-80T2 |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60D6DPQ-E0 RJH60D6DPQ-E0-T2 |
600V - 40A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| SGB06N60 SGD06N60 SGP06N60 Q67040-S4450 SGU06N60 Q |
Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 6A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 6A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
