PART |
Description |
Maker |
CL155 CL166 CL155D CL155A CL155B CL155C CL166C |
SILICON PLANAR EPITAXIAL TRANSISTOR SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR 20WATT AUDIO AMPLIFIER OUTPUT AND SWITCHING APPLICATIONS 8-Pin High-Performance Resonant Mode Controller 8-SOIC -40 to 125 Micro-USB type B receptacle, Horizontal SMD, mates with AJP39G Micro-B plug
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MICRO-ELECTRONICS[Micro Electronics]
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HIP5010 HIP5010IS HIP5010IS1 HIP5011 HIP5011IS HIP |
7V, 17A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge FPGA - 1000000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN HB BASED PRPHL DRVR WITH PWM, PSSO7 Synchronous Half-Bridge Driver(同步半桥驱动 同步半桥驱动器(同步半桥驱动器) 7V, 17A SynchroFETComplementary Drive Synchronous Half-Bridge 7V, 17A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge From old datasheet system 7V, 17A SynchroFET?Complementary Drive Synchronous Half-Bridge 7V, 17A SynchroFET Complementary Drive Synchronous Half-Bridge 7V/ 17A SynchroFET Complementary Drive Synchronous Half-Bridge 7V, 17A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge
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Intersil, Corp. INTERSIL[Intersil Corporation]
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D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS From old datasheet system
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] http://
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NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™ Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET) Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
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ON Semiconductor
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TC1037 TC1037CECT TC1039 TC1038 TC1039CECH TC1038C |
The TC1037/1038/1039 are single, low-power comparators designed for low-power applications. These comparators are specifically designed for operation from a single supply. However, operation from dual supplies also is possible, and power s Linear Building Block . Single Comparator in SOT Packages
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MICROCHIP[Microchip Technology] Microchip Technology Inc.
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MJF31C MJF32C MJF31C-D |
Complementary Silicon Plastic Power Transistors for Isolated Package Applications 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
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ONSEMI[ON Semiconductor]
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FDG8842CZ |
Complementary PowerTrench? MOSFET Complementary PowerTrench㈢ MOSFET
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Fairchild Semiconductor
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MJL0281A MJL0281AG MJL0302A MJL0302AG JL0281AG |
Complementary Power Transistors Complementary NPN-PNP Power Bipolar Transistors
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ON Semiconductor
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CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
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Continental Device India Limited
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MBS1230-22 MBS1205 MBS1205-22 MBS1210-22 MBS1215-2 |
Equipment Designed to Meet EMI Regulations Such As VCCI /CISPR /FCC /VDE /etc Equipment Designed to Meet EMI Regulations Such As VCCICISPRFCCVDEetc Equipment Designed to Meet EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc
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LAMBDA[DENSEI-LAMBDA]
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