| PART |
Description |
Maker |
| GT60J323 GT60J323H |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Current Resonance Inverter Switching Application
|
TOSHIBA[Toshiba Semiconductor]
|
| GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT50J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT60M32306 GT60M323 |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
| GT40T30106 GT40T301 |
Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications
|
Toshiba Semiconductor
|
| CP-SNT55W |
Swi tchmode power suppl ies 瑞东tchmode权力suppl载体
|
Electronic Theatre Controls, Inc.
|
| MR1721 MR1520 |
Partial Resonance PS IC
|
Shindengen Electric
|
| MB3873 MB3873PF |
Multi-Resonance AC/DC Converter IC
|
Fujitsu Limited
|
| 3G3MV-A2022 3G3MV-A2002 3G3MV-A2004 3G3MV-A2015 3G |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit
INVERTER 3 PHASE 2.2KW 415VAC
INVERTER 1 PHASE 0.25KW
INVERTER 1 PHASE 2.2KW
INVERTER 3 PHASE 3KW 415VAC
INVERTER 3 PHASE 4KW 415VAC
逆变器一.1KW
逆变器单.5千瓦
|
复位半导
|
| SKIIP03NEB066V1 |
Large Current 300mA CMOS LDO Regulators; Output voltage (V): 2.9; Output current (mA): 300; Supply voltage (V): 2.5 to 5.5; I/O voltage difference (mV): 60; Ripple rejection (dB): 60; Circuit current (µA): 65; Package: HVSOF6
3-phase bridge rectifier brake chopper 3-phase bridge inverter
|
Semikron International
|
| SP6300P SP6300 |
Quasi-Resonance Flyback Controller 准谐振反激式控制器
|
AUK, Corp.
AUK corp
|
| EG1125 |
Pseudo-resonance constant voltage switch
|
Jingjing Microelectroni...
|
