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RJK03N3DPA - 30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching

RJK03N3DPA_8189932.PDF Datasheet


 Full text search : 30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
 Product Description search : 30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching


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FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP
FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6)
FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
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