| PART |
Description |
Maker |
| RLDH808-1200-5 |
main technical parameters
|
Roithner LaserTechnik G...
|
| SI7136DP-RC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SUD50N06-07L-RC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4378DY_RC |
R-C Thermal Model Parameters
|
VISAY[Vishay Siliconix]
|
| SI7431DPRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4670DYRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4856ADY-RC |
R-C Thermal Model Parameters
|
VAISH[Vaishali Semiconductor]
|
| SI4434DY-RC |
R-C Thermal Model Parameters
|
VISAY[Vishay Siliconix]
|
| ST13003DN |
Low spread of dynamic parameters
|
STMicroelectronics
|
| UPD70F3726 |
Parameters for 32-Bit V850ES/KX2 Devices
|
NEC Electronics Inc.
|
| IRFB4212 IRFB4212PBF |
Key parameters optimized for Class-D audio amplifier applications
Key parameters optimized for Class-D audio amplifier applications
|
Kersemi Electronic Co., Ltd...
Kersemi Electronic Co.,...
|
