| PART |
Description |
Maker |
| IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
HARRIS SEMICONDUCTOR
Intersil Corporation
|
| IRF9520 FN2281 |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| STB11NM60-1 STB11NM60T4 |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
STMICROELECTRONICS
|
| IRFR9120 IRFU9120 IRFR91209A |
5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRFR9120 IRFU9120 FN3987 |
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
P Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| BSP125L6327 |
0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INFINEON TECHNOLOGIES AG
|
| 1N60AG-A-T92-B |
0.5 A, 600 V, 15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| 2SK795H |
2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PANASONIC CORP
|
| BSP125E6433 |
0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS A G
|
| BUZ45 |
9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET
9.6A/ 500V/ 0.600 Ohm/ N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
HARRIS
|
|
