| PART |
Description |
Maker |
| CDBT-70S-G |
Small Signal Schottky Diodes, V-RRM=70V, V-R=70V, I-O=70mA
|
Comchip Technology
|
| ACDST-99-G ACDST-70-G |
Switching Diodes Array, V-RRM=70V, V-R=70V, P-D=225mW, I-F=200mA
|
Comchip Technology
|
| FDMC8296 FDMC829610 |
30V N-Channel Power Trench MOSFET; Package: Power 33 (PQFN); No of Pins: 8; Container: Tape & Reel 12 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power Trench? MOSFET 30V, 18A, 8.0m
|
Fairchild Semiconductor, Corp.
|
| FDD6632_04 FDD6632 FDD663204 FDD6632NL |
30V N-Channel Logic Level UltraFET Trench Power MOSFET 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Logic Level UltraFET? Trench Power MOSFET 30V, 9A, 70m?/a>
N-Channel Logic Level UltraFET㈢ Trench Power MOSFET 30V, 9A, 70mз
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| TC514102AJ-60 TC514102AP TC514102AP-60 TC514102ASJ |
T-NPN- SI-LO-NOISE
4,194,304 x 1 BIT DYNAMIC RAM
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:20Vrms; Peak Surge Current (8/20uS), Itm:250A; Clamping Voltage 8/20us Max :70V; Peak Energy (10/1000uS):1.5J; Package/Case:Radial Leaded; Clamping Voltage Max, Vc:70V
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| FDD6632 |
N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Logic Level UltraFET Trench Power MOSFET 30V/ 9A/ 90m
N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mOhm
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDB3682_FDP3682 FDB3682 FDP3682 |
N-Channel UltraFET Trench MOSFET 100V, 32A, 36mOhm
N-Channel UltraFET Trench MOSFET 100V, 32A, 36m Ohm
From old datasheet system
|
Fairchild Semiconductor
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| FDP047AN08 FDP047AN08A0 |
N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mз
N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.7m
N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.7mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDD5810 FDD581007 FDD5810-F085 |
N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhm
N-Channel Logic Level Trench㈢ MOSFET
N-Channel Logic Level Trench? MOSFET
|
Fairchild Semiconductor
|
| TDA7296V TDA7296 |
70V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY 70V 60瓦的DMOS音频放大器静意法半导体，
60V-60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
SGS Thomson Microelectronics
|
| 2N7002PV |
60 V, 350 mA N-channel Trench MOSFET
60 V, 350 mA dual N-channel Trench MOSFET
|
NXP Semiconductors
|
