PART |
Description |
Maker |
LBSS139WT1G LBSS139WT3G |
Power MOSFET 200 mAmps, 50 Volts N?Channel SC?0
|
Leshan Radio Company
|
2N7000G11 |
Small Signal MOSFET 200 mAmps, 60 Volts N.Channel TO.92
|
ON Semiconductor
|
NTES1P02 NTES1P02-D |
P?Channel Power MOSFET Power MOSFET 50 mAmps, 20 Volts P-Channel(50mA,20V,P沟道增强型MOS场效应管) Power MOSFET 50 mAmps, 20 Volts P-Channel SC-75
|
ON Semiconductor
|
BS108ZL1G |
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
ON Semiconductor
|
BS108ZL1 BS108 BS108ZL1G BS108G |
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92(250mA,200V,小信号,逻辑电平,N-沟道增强型MOS场效应管(TO-92封装
|
ONSEMI[ON Semiconductor]
|
LBSS84WT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
LBSS84LT1G LBSS84LT3G |
Power MOSFET F30 mAmps, 50 Volts
|
Leshan Radio Company
|
LMGSF1N02LT1 |
Power MOSFET 750 mAmps, 20 Volts
|
LRC[Leshan Radio Company]
|
MGSF1N02LT1 MGSF1N02LT3 |
Power MOSFET 750 mAmps, 20 Volts N?Channel SOT?3
|
TY Semiconductor Co., Ltd
|
MMBF2201NT1G MMBF2201NT106 MMBF2201NT1 |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
|
ONSEMI[ON Semiconductor]
|
APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
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