Part Number Hot Search : 
UPSC600 RF630MF XRS610 CA102 TDF0117 SFT13 ZD33V0 A200R
Product Description
Full Text Search

RJK03R4DPA - Built in SBD Dual N-channel Power MOS FET High Speed Power Switching

RJK03R4DPA_8197188.PDF Datasheet


 Full text search : Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
 Product Description search : Built in SBD Dual N-channel Power MOS FET High Speed Power Switching


 Related Part Number
PART Description Maker
RJK03P0DPA RJK03P0DPA-00-J5A Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
Renesas Electronics Corporation
RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
Renesas Electronics Corporation
RJK03E5DPA-00-J5A RJK03E5DPA13 Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics Corporation
RJK0206DPA-00-J5A RJK0206DPA13 Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics Corporation
RJK03N2DPA 30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics Corporation
CPH5826 Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
Sanyo Semicon Device
FCQ20B06 SBD DUAL DIODES - CATHODE COMMON
ETC
NIEC[Nihon Inter Electronics Corporation]
FCQ20A03L SBD DUAL DIODES - CATHODE COMMON
Nihon Inter Electronics Corporation
ETC
TW8810D TFT Flat Panel Controller with Built-in 3D Video Decoder, Triple ADCs, Dual View and Dual PIP Support
Renesas Electronics Corporation
OM6215SS OM6214SS OM6216SS OM6217SS 30 A, 100 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE
100V Dual N-Channel MOSFET in a S-6 package
400V Dual N-Channel MOSFET in a S-6 package
500V Dual N-Channel MOSFET in a S-6 package
200V Dual N-Channel MOSFET in a S-6 package
List of Unclassifed Manufacturers
ETC
International Rectifier
FDD8426H 40V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench垄莽 MOSFET N-Channel: 40 V, 12 A, 12 m楼? P-Channel: -40 V, -10 A, 17 m楼?
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
Fairchild Semiconductor
PT2390 PT2390-S Echo IC with Built in Michrophone Amplifier and Output Mixer
Echo IC with Built-in Microphone Amplifier & Output Mixer
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3711Z with Lead Free Packaging
Princeton Technology Co...
Princeton Technology Corporation
PTC
 
 Related keyword From Full Text Search System
RJK03R4DPA Description RJK03R4DPA DATASHEET PDF RJK03R4DPA 资料查找 RJK03R4DPA ac/dc eurocard RJK03R4DPA Battery MCU
RJK03R4DPA purpose RJK03R4DPA Range RJK03R4DPA tdma modulator RJK03R4DPA maker RJK03R4DPA siliconix
 

 

Price & Availability of RJK03R4DPA

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.6156289577484