| PART |
Description |
Maker |
| RJK1052DPB-13 RJK1052DPB-00-J5 RJK1052DPB-15 |
100V, 20A, 20m max. Silicon N Channel Power MOS FET Power Switching
100V, 20A, 20m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0852DPB RJK0852DPB-00-J5 RJK0852DPB-13 |
80V, 30A, 12m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| Q62705-K274 KPY33-RK |
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IRFP460AS |
Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）最大值\u003d 0.27ohm，身份证\u003d 20A条）
Power MOSFET(Vdss=500V Rds(on)max=0.27ohm Id=20A)
500V Single N-Channel HEXFET Power MOSFET in a SMD-247 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| CDSV6-4448SD-G CDSV6-4448AD-G CDSV6-4448TI-G |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=100mA
|
Comchip Technology
|
| 2SB920L 2SD1236L |
PNP Epitaxial Planar Silicon Transistors 80V/5A Switching Applications
NPN Epitaxial Planar Silicon Transistors 80V/5A Switching Applications
|
SANYO
|
| 2SB920 2SB920L 2SD1236L |
80V/5A Switching Applications 80V/5A开关应
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| 164-22 163-28 163-12 164-12 164-26 164-20 164-30 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 20A I(C) | STR-5/16
晶体管|晶体管|叩| 160V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 120伏特五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 40V的五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管| npn型| 280伏特五（巴西）总裁|甲一（c）| STR-5/16
|
Ecliptek, Corp.
|
| NTE19 NTE18 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | SIP
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 700MA I(C) | SIP
Silicon Complementary Transistors High Voltage, High Current Capacity Driver
|
NTE[NTE Electronics]
|
| T308N20TOC |
2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier
|
Eupec Power Semiconductors
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
