| PART |
Description |
Maker |
| KBU3501-G KBU3502-G KBU3504-G KBU3506-G KBU3510-G |
Bridge Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=35A
Bridge Rectifiers, V-RRM=50V, V-DC=50V, I-(AV)=35A
Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=35A
Bridge Rectifiers, V-RRM=200V, V-DC=200V, I-(AV)=35A
Silicon Bridge Rectifiers
Bridge Rectifiers, V<sub>RRM</sub>=1000V, V<sub>DC</sub>=1000V, I<sub>(AV)</sub>=35A
Bridge Rectifiers, V-RRM=800V, V-DC=800V, I-(AV)=35A
Bridge Rectifiers, V-RRM=400V, V-DC=400V, I-(AV)=35A
|
Comchip Technology
|
| BP35-06G BP35-08G BP35-005G BP35-01G BP35-02G BP35 |
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| BP35-005 BP35-01 BP35-02 BP35-04 BP35-06 BP35-08 |
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| NTE19 NTE18 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | SIP
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 700MA I(C) | SIP
Silicon Complementary Transistors High Voltage, High Current Capacity Driver
|
NTE[NTE Electronics]
|
| RJK0655DPB RJK0655DPB-00-J5 RJK0655DPB-15 |
60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching
60V, 35A, 6.7m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| FMMT620-15 |
80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
|
Diodes Incorporated
|
| BST52TA |
80V NPN SILICON PLANAR DARLINGTON TRANSISTOR IN SOT89
|
Diodes
|
| MJD44H11 MJD44H11-001 MJD45H11-001 MJD45H11T4G MJD |
SILICON POWER TRANSISTORS 8 A, 80 V, NPN, Si, POWER TRANSISTOR
Power 10A 80V PLA NPN
Power 10A 80V PLA PNP
|
ONSEMI[ON Semiconductor]
|
| RJK0451DPB-00-J5 RJK0451DPB13 |
40V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| HUF75321S3S FN4360 HUF75321P3 |
35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs(35A, 55V, 0.034 Ω, N沟道UltraFET功率MOS场效应管)
From old datasheet system
35A/ 55V/ 0.034 Ohm/ N-Channel UltraFET Power MOSFETs
|
Intersil Corporation
|
| NTE5548 NTE5541 NTE5545 |
Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A.
Silicon Controlled Rectifier (SCR) 35 Amp
|
NTE[NTE Electronics]
|
| 2SD2200 2SB1451 |
NPN Epitaxial Planar Silicon Transistors 80V/5A Switching Applications
PNP Epitaxial Planar Silicon Transistors 80V/5A Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
