| PART |
Description |
Maker |
| MR18R1628GEG0 |
Key Timing Parameters
|
Samsung semiconductor
|
| MR18R16228DF0 MR16R1622 MR18R1622DF0 MR16R16224DF0 |
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| MR18R1628EG0-CM8 MR16R1628EG0-CK8 MR16R162GEG0-CK8 |
From old datasheet system
CONN HEADER 20POS DL PCB 30GOLD
Key Timing Parameters 关键的定时参
CONN HEADER 18POS DL PCB 30GOLD 关键的定时参
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| 87636-2102 |
1.27mm (.050) Pitch DDR DIMM Socket, Vertical, Black Latch, Single Key, with Beveled Metal Pins, 2.5V Left Voltage Key, 3.23mm (.127) Tail Length
|
Molex Electronics Ltd.
|
| 87636-2002 |
1.27mm (.050) Pitch DDR DIMM Socket, Vertical, Beige Latch, Single Key, with Beveled Metal Pins, 2.5V Left Voltage Key, 3.23mm (.127) Tail Length
|
Molex Electronics Ltd.
|
| SI7136DP-RC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI5484DU-RC |
R-C Thermal Model Parameters
|
Vaishali Semiconductor
|
| SI7431DPRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI2323DS-RC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4483EDY_RC |
R-C Thermal Model Parameters
|
VISAY[Vishay Siliconix]
|
