| PART |
Description |
Maker |
| RJK0651DPB RJK0651DPB-00-J5 RJK0651DPB-13 |
60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| FAN1086D-2.85 FAN1086S-3.3 FAN1086S-2.5 FAN1086M-2 |
Neuron ICs; Max. Input Clock: 20 MHz; EEPROM: 2 KB; RAM: 2 KB; ROM: 16 KB; Package: 32 pin SOP; External Memory I/F: No
; Sensitivity dBµmV: 93 ~ 107; Package: SSOP16; Production Status: MP
FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP
FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6)
FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
积极的固定电压稳压器
FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45)
FETs Nch 30V<VDSS=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)
|
|
| D25SC6MR |
Schottky Rectifiers (SBD) (60V 25A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| LTC3411 LTC3411EMS LTC3411EDD |
1.25A, 4MHz, Synchronous Step-Down DC/DC Converter 2 A SWITCHING REGULATOR, 4000 kHz SWITCHING FREQ-MAX, PDSO10
1.25A/ 4MHz/ Synchronous Step-Down DC/DC Converter
4MHz, 1.25A Synchronous Step-Down DC/DC Converter
1.25A 4MHz Synchronous Step-Down DC/DC Converter
|
Linear Technology, Corp.
LINER[Linear Technology]
|
| GBJ25005-BP GBJ2504-BP GBJ2510-BP GBJ2502-BP GBJ25 |
RECT BRIDGE GPP 25A 50V GBJ 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 400V GBJ 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 1000V GBJ 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 200V GBJ 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
25 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts
|
Micro Commercial Components, Corp.
Micro Commercial Compon...
|
| SBT250-06L |
Schottky Barrier Diode (Twin Type ・ Cathode Common) 60V, 25A Rectifier
|
Sanyo Semicon Device
|
| FSF055D3 FSF055R FSF055R3 FSF055R4 FSF055D FSF055D |
25A/ 60V/ 0.020 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
25A, 60V, 0.020 OHM, RAD HARD, SEGR RESISTANT, N-CHANNEL POWER MOSFETS
|
HARRIS SEMICONDUCTOR
Intersil Corporation
|
| FDMC887812 |
N-Channel Power Trench? MOSFET 30V, 16.5A, 14m
|
Fairchild Semiconductor
|
| 25RIA160 25RIA80S90 25RIA 25RIA10 25RIA100 25RIA10 |
800V 25A Phase Control SCR in a TO-208AA (TO-48) package
1400V 40A Phase Control SCR in a TO-208AA (TO-48) package
1200V 25A Phase Control SCR in a TO-208AA (TO-48) package
1000V 25A Phase Control SCR in a TO-208AA (TO-48) package
100V 25A Phase Control SCR in a TO-208AA (TO-48) package
600V 25A Phase Control SCR in a TO-208AA (TO-48) package
400V 25A Phase Control SCR in a TO-208AA (TO-48) package
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
MEDIUM POWER THYRISTORS 中功率晶闸管
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 0923181014 |
Picoflex PF-50 IDT-Board In Z-Style, 10 Circuits, 0.14m (5.51") Length
|
Molex Electronics Ltd.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
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