| PART |
Description |
Maker |
| APT30GF60JCU2 |
ISOTOP? Boost chopper NPT IGBT SiC chopper diode
ISOTOP垄莽 Boost chopper NPT IGBT SiC chopper diode
|
Microsemi Corporation
|
| IXGH48N60C3C1 |
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
|
IXYS Corporation
|
| IXGR60N60C3C1 |
GenX3 600V IGBT w/ SiC Anti-Parallel Diode
|
IXYS
|
| IRGPS60B120KDP IRGPS60B120KDP-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT
|
International Rectifier
|
| APT2X51DC120J APT2X50DC120J |
ISOTOP? SiC Diode Power Module
ISOTOP垄莽 SiC Diode Power Module
|
Microsemi Corporation
|
| RJS6004WDPK RJS6004WDPK-00T0 |
600V - 20A - Diode SiC Schottky Barrier Diode
|
Renesas Electronics Corporation
|
| IDD03SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
3 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-252
|
Infineon Technologies AG
|
| QID1210006-14 |
Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts
|
Powerex Power Semicondu...
|
| GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS
EMI/RFI FILTER
IGBT MODULE, TRENCH, 600V, 6 PACK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600V; Current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; Current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes
IGBT MODULE, 6 PACK 600VIGBT MODULE, 6 PACK 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24A; Current, Icm pulsed:22A; Power, Pd:1700W; Time, rise:30ns;
EPROM CMOS Programmable Logic Device
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
