| PART |
Description |
Maker |
| IGC168T170S8RH |
low switching losses and saturation losses
|
Infineon Technologies A...
|
| HYG75P120D1S |
low switching losses
|
HY ELECTRONIC CORP.
|
| HYG30P120H1K1 |
low switching losses
|
HY ELECTRONIC CORP.
|
| IRF7494TRPBF IRF7495TRPBF |
HEXFETPower MOSFET
Low Gate to Drain Charge to Reduce Switching Losses
|
International Rectifier
|
| IKY40N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IKQ40N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| MKP1839 |
C-values 1000 pF - 10 μF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL
|
Vishay
|
| SPD06N60C3 |
for lowest Conduction Losses & fastest Switching
|
Infineon
|
| SPN02N60C3 |
for lowest Conduction Losses & fastest Switching
|
Infineon
|
| SPP11N65C3 |
for lowest Conduction Losses & fastest Switching
|
Infineon
|
| SPA04N60C3 SPB04N60C3 SPP04N60C3 |
for lowest Conduction Losses & fastest Switching
|
Infineon
|
