| PART |
Description |
Maker |
| ENA1286A |
Bipolar Transistor -12V, -3A, Low VCE(sat), PNP Single MCPH6
|
ON Semiconductor
|
| ZXTN25012EFHTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
12V, SOT23, NPN medium power transistor
|
Diodes Incorporated
|
| NP1-6 NP2.8-12 NP12-6 NP7-12 NPL38-12 NP38-12 NP65 |
BLEIAKKU 6V 250G
BATTERY 12V 2.8AH
BATTERY 6V 12AH
BLEIAKKU 12V 2800G
BLEIAKKU NPL 12V 14.7KG
BLEIAKKU 12V 13800G
BLEIAKKU 12V 22700G
BLEIAKKU 6V 2200G
BLEIAKKU 12V 4000G
BLEIAKKU 12V 6.3KG
BLEIAKKU 12V 5000G
BLEIAKKU 12V 900G
BATTERY 6V 7AH
BATTERY 12V 2.3AH 蓄电2V 2.3AH
BLEIAKKU NPL 12V 24KG BLEIAKKU不良贷款12V4公斤
|
Yuasa Battery, Inc.
|
| ZXT10P12DE6 ZXT10P12DE6TA ZXT10P12DE6TC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
PNP Low Sat Transistor
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| 2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| NE85618 NE85619 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-343R
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-23VAR
From old datasheet system
|
NEC Electron Devices
|
| JL120-12BYA JL120-12SYA |
VOLT REGULATOR|FIXED|-12V|BIPOLAR|TO-204/-3|3PIN|METAL 电压调节器|固定| - 12V的|双极| TO-204/-3 | 3针|金属
|
YEONHO Electronics Co., Ltd.
|
| IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| CT30SM-12 CT30SM-1 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR GENERAL INVERTER UPS USE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
GENERAL INVERTER . UPS USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGW12N120 |
Insulated Gate Bipolar Transistor N-Channel
Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
|
ONSEMI[ON Semiconductor]
|
