| PART |
Description |
Maker |
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| 2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
| KSB1151 KSB1151YS KSB1151YSTSSTU KSB1151YSTSTU KSB |
Low Collector-Emitter Saturation Voltage Large Collector Current
PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| PC865 PC865-SERIES |
High Sensitivity/ Low Collector Dark Voltage Type Photocoupler Current/ High Collector-emitter
High Sensitivity, Low Collector Dark Voltage Type Photocoupler Current, High Collector-emitter
High Sensitivity, Low Collector Dark Current, High Collector-emitter Voltage Type Photocoupler
|
SHARP[Sharp Electrionic Components]
|
| SMBTA5607 |
PNP Silicon AF Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| BCV62 |
High current gain Low collector-emitter saturation voltage
|
TY Semiconductor Co., L...
|
| 2SB1201 |
Low collector-to-emitter saturation voltage. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
| 2SA1729 |
Adoption of FBET, MBIT Process. Low Collector-to-Emitter Saturation Voltage.
|
TY Semiconductor Co., Ltd
|
| 2SD1621 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
