| PART |
Description |
Maker |
| IXTN61N50 IXTT75N10 IXTH67N10 IXTH75N10 IXTM67N10 |
MegaMOS FET 75 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
High Current Power MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IRFP460 |
N-Channel Enhancement Mode MegaMOS Power MOSFET(最大漏源击穿电00V,导通电.27Ω的N沟道增强MegaMOS功率MOSFET) 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-Channel Enhancement Mode MegaMOS Power MOSFET(最大漏源击穿电00V,导通电.27Ω的N沟道增强B>MegaMOS功率MOSFET)
MegaMOS - Power MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| 2SK3053 2SK3053JM |
Nch power MOS FET MP-45F high-current switching
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| PS7341CL-1A PS7341CL-1A-A PS7341CL-1A-E3 PS7341CL- |
CURRENT LIMIT TYPE 6-PIN DIP, HIGH ISOLATION VOLTAGE 1-ch Optical Coupled MOS FET
|
California Eastern Laboratories
CEL[California Eastern Labs]
|
| PS7112-1A PS7112L PS7112L-1A PS7112L-1A-E3 PS7112L |
6-PIN DIP, 200 mA CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET 6引脚DIP00毫安的连续负载电1通道光学耦合场效应晶体管
Coaxial Cable; Coaxial RG/U Type:174; Impedance:50ohm; Conductor Size AWG:26; No. Strands x Strand Size:7 x 34; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes
Solid State Relay(固态继电器)
6-PIN DIP / 200 mA CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET
6-PIN DIP 200 mA CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NIF62514_06 NIF62514 NIF62514T1 NIF62514T1G NIF625 |
Self−protected FET with Temperature and Current Limit
Self-protected FET with Temperature and Current Limit(自保护型FET（带过温和过流保护）)
|
ONSEMI[ON Semiconductor]
|
| SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存???
5.5 A, 16000 V, SILICON, RECTIFIER DIODE
High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V，温5℃时平均整流电流5.5A,高压，大电流,高密度，标准恢复整流
STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
| MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
