Part Number Hot Search : 
13N50 BFT30CSM KLNR5 EP8272 AC08DSM S1200 D4800 12D05
Product Description
Full Text Search

PDSP16116MC - 0.5-7.0V; 18mA; 16 x 16bit complex multiplier. For fast fourier transform, digital filtering, radar and sonar processing

PDSP16116MC_8235260.PDF Datasheet


 Full text search : 0.5-7.0V; 18mA; 16 x 16bit complex multiplier. For fast fourier transform, digital filtering, radar and sonar processing
 Product Description search : 0.5-7.0V; 18mA; 16 x 16bit complex multiplier. For fast fourier transform, digital filtering, radar and sonar processing


 Related Part Number
PART Description Maker
AK4550VT AKM4550 AKD4550 AK4550 AK4550VTP-E2 AK535 Enchanced dual bit 20 bit ADC
SPECIALTY CONSUMER CIRCUIT, PDSO16
JT 41C 41#20 PIN PLUG
LOW POWER & SMALL PACKAGE 16BIT CODEC
Low Power & Samll Package 16bit ## CODEC
LOW POWER & SMALL PACKAGE 16BIT CODEC
Asahi Kasei Microsystems Co.,Ltd
AKM[Asahi Kasei Microsystems]
Asahi Kasei Microsystem...
HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 H 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
Hynix Semiconductor
A43L2616V-6PH A43L2616V-7PH Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
AMIC Technology
KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
Samsung Electronic
KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000B 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
Samsung Electronic
SAMSUNG[Samsung semiconductor]
HY51V18163HGJ HY51V18163HGJ-5 HY51V18163HGJ-6 HY51 1M x 16Bit EDO DRAM
Hynix Semiconductor
HY51V65163HG HY51V65163HGJ-45 HY51V65163HGJ-5 HY51 4M x 16Bit EDO DRAM
Hynix Semiconductor
AK535505 AKD5355 Low Power 16bit ツヒ ADC
Asahi Kasei Microsystems
CS5509-ASZ CS5509 CS5509-AP CS5509-AS SINGLE SUPPLY 16BIT A/D CONVERTER
CIRRUS[Cirrus Logic]
K4S641632C-TC_L10 K4S641632C-TC_L1H K4S641632C-TC_ 1M x 16Bit x 4 Banks Synchronous DRAM
Samsung semiconductor
K4M51163PC-X 8M x 16Bit x 4 Banks Mobile SDRAM
Samsung semiconductor
 
 Related keyword From Full Text Search System
PDSP16116MC integrated circuit PDSP16116MC stock PDSP16116MC Amplifiers PDSP16116MC 电子元件中文资料网站 PDSP16116MC Dropout
PDSP16116MC использование PDSP16116MC isa bus PDSP16116MC level PDSP16116MC data sheet ic PDSP16116MC Phase
 

 

Price & Availability of PDSP16116MC

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
2.7945811748505