| PART |
Description |
Maker |
| MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SK904 2SK1212 2SK1663 2SK2079 2SK1553 2SK1105 |
(2SKxxxx) MOSFETs
|
Fuji Semiconductors
|
| 2SK961 2SK1917 |
(2SKxxxx) MOSFETs
|
Fuji Semiconductors
|
| PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| AH1802-SNG-7 AH1802-FJG-7-01 AH1802-WG-7 AH1802-FY |
Micropower, Ultra-Sensitive Omnipolar Hall-Effect Switch
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-4mT, 0.30V, RECTANGULAR, SURFACE MOUNT
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-4mT, 0.30V, SQUARE, SURFACE MOUNT 2 X 2 MM, GREEN, DFN-6
|
Diodes, Inc.
Diodes Inc.
Diodes Incorporated
|
| BC264A BC264B BC264C BC264D BC264 |
N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS
N Channel Junction Field Effect Transistors
|
NXP Semiconductors
Philips Semiconductors
|
| SSM3K02F |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 东芝场效应晶体管频道马鞍山类
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Corporation
Toshiba, Corp.
Toshiba Semiconductor
|
| AH276Q-PG-B-A AH276Q-PG-B-B AH276Q-PG-B-C AH276Q-P |
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, SIP-4
MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, SIP-4
|
Diodes Incorporated
http://
Diodes, Inc.
|
| AH1751-WG-A-A AH1751-PG-7-A AH1751-PG-A-A AH1751-P |
MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, 300mV, RECTANGULAR, THROUGH HOLE MOUNT
HALL EFFECT LATCH
|
Diodes Inc.
Diodes Incorporated
|
| HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦，1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
