| PART |
Description |
Maker |
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| IXDA20N120AS |
IGBT Discretes: NPT IGBT
High Voltage IGBT
|
IXYS
|
| IXSX35N120AU1 |
High Voltage IGBT with Diode(VCES200V，VCE(sat)4V的高电压绝缘栅双极晶体管(带二极管 70 A, 1200 V, N-CHANNEL IGBT, TO-247
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXSH15N120B IXST15N120B |
1200V HiPerFAST IGBT
HIGH Voltage IGBT
|
IXYS Corporation
|
| APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
|
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| APT12GT60BR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs
Thunderbolt IGBT 600V 25A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs
|
ADPOW[Advanced Power Technology]
|
| APT20GF120BR |
The Fast IGBT is a new generation of high voltage power IGBTs.
Fast IGBT 1200V 32A
|
Advanced Power Technology Ltd.
|
| APT100GF60LR APT100GF60B2R |
Fast IGBT 600V 100A
The Fast IGBT is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT20GF120KR |
Fast IGBT 1200V 32A
The Fast IGBT is a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| Q67078-A4400-A2 BUP200 BUP200SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| APT20GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 40A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
