| PART |
Description |
Maker |
| HMC616LP310 616LP3E |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz
175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| NSPG300A |
120mW; 5V; 30mA nichia blue LED
|
NICHIA CORPORATION
|
| TS488IQT |
Pop-free 120mW stereo headphone amplifier
|
ST Microelectronics
|
| TSA1204 TSA1204IF TSA1204IFT |
DUAL-CHANNEL, 12-BIT, 20MSPS, 120mW A/D CONVERTER
|
STMICROELECTRONICS[STMicroelectronics]
|
| ML725AA11F ML725B11F ML725J11F ML720L11S ML720AA11 |
1310 nm, LASER DIODE
MITSUBISHI LASER DIODES InGaAsP DFB LASER DIODES 三菱激光二极管InGaAsP的DFB激光器
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| H12WD4850PG |
Ratings from 25A to 125A @ 48-660 V AC
|
Crydom Inc.,
|
| SFH462 |
4.19 mm, 1 ELEMENT, INFRARED LED, 660 nm
|
Infineon Technologies AG
|
| FSS9130R FN4082 FSS9130R4 FSS9130D FSS9130D1 FSS91 |
6A/ -100V/ 0.660 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| S48D75-22 S24D12-22 S24A12-22 S48R50-22 S24R25-22 |
Single Output to 125A 660 Vac AC/DC Control
|
Teledyne Technologies Incorporated
|
| VT5376V032 |
Ultra-low power laser motion sensor for laser mouse applications
|
STMicroelectronics
|
| MAX3946ETG |
1.0625Gbps to 11.3Gbps, SFP Laser Driver with Laser Impedance Mismatch Tolerance
|
Maxim Integrated Products
|
| ML725J16F ML7XX1602 ML725B16F ML720J16S |
MITSUBISHI LASER DIODES 2.5Gbps InGaAsP DFB LASER DIODE
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
