| PART |
Description |
Maker |
| 221034 221033 |
SCHIEBEPOTENTIOMETER STEREO LOG 10K 350V
SCHIEBEPOTENTIOMETER MONO LOG 10K 350V SCHIEBEPOTENTIOMETER单声0,000 350V日志
|
Ametherm, Inc.
|
| IRF321 IRF322 IRF323 IRF320 |
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs
|
Harris
http://
Intersil Corporation
|
| IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A)
CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRFIBC30G IRFIBC30 |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)
Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=2.5A)
|
IRF[International Rectifier]
|
| IRFIBC20G IRFIBC20 IRFIBC20GPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=1.7A)
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)
|
IRF[International Rectifier]
|
| APT35M80AFN |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 350V V(BR)DSS | 58A I(D) 晶体管| MOSFET功率模块|独立| 350V五（巴西）直| 58A条（丁）
|
Rubycon, Corp.
|
| IRFBC20L IRFBC20S |
Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=2.2A)
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
IRF[International Rectifier]
|
| HGT1S20N35G3VL HGTP20N35G3VL HGT1S20N35G3VLS HGT1S |
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB
XC9536-6PC44C - NOT RECOMMENDED for NEW DESIGN
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| AL01Z EL1Z EL1 |
Circular Connector; No. of Contacts:21; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
200V,Ultra-Fast-Recovery Rectifier Diodes(200V,超快恢复整流二极
350V,Ultra-Fast-Recovery Rectifier Diodes(350V,超快恢复整流二极
|
Sanken Electric Co.,Ltd.
SANKEN[Sanken electric]
|
