| PART |
Description |
Maker |
| SPJ-63S SPB-G56S MPE-24H SPB-64S SPB-G34 SPB-G34S |
Schottky Barrier Diodes (Power Surface Mount) 30V / 40V / 60V
Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V 6 A, SILICON, RECTIFIER DIODE
Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V 肖特基二极管（电源表面贴装）30V的，40V的，60V
Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V 5 A, 40 V, SILICON, RECTIFIER DIODE
Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V 3 A, 40 V, SILICON, RECTIFIER DIODE
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http://
Sanken Electric Co., Ltd.
Sanken Electric Co.,Ltd.
SANKEN[Sanken electric]
|
| 1N6525U |
High Voltage Diodes - Surface Mount 150mA - 250mA l 70ns l Hermetic
|
Voltage Multipliers Inc...
|
| DDTB122TU-7-F DDTB142JU DDTB142TU DDTB122LU DDTB12 |
Prebiased Transistors
PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
PNP PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
Diodes, Inc.
|
| ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 3.5AI（丙）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 10A条一（c）|1
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 8A条一（c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 3A条一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五（巴西）总裁|5A一（c
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Cypress Semiconductor, Corp.
Vicor, Corp.
Atmel, Corp.
Advanced Analogic Technologies, Inc.
EPCOS AG
|
| SCD12 SCD14 |
VOLTAGE 20V ~ 60V 1.0 AMP Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| BU52001GUL-E2 |
MAGNETIC FIELD SENSOR-HALL EFFECT, 0.8-5.5mT, 0.40-2.60V, SQUARE, SURFACE MOUNT
|
|
| SGC2550S-15 |
Surface Mount Schottky Rectifier Reverse Voltage 50~60V Forward Current 25A
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GOOD-ARK Electronics
|
| 2N3209DCSM |
Dual High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型双PNP晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED/ MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| IRHSLNA58064 IRHSLNA53064 IRHSLNA54064 IRHSLNA5706 |
60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2)
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 75A条（丁）|贴片
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IRF[International Rectifier]
International Rectifier, Corp.
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