| PART |
Description |
Maker |
| 1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V，最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电3V，最大反向电流降.01μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电12V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电14V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V，最大反向电.8μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V，最大反向电0μA的硅外延平面型齐纳二极管)
PC 5/10-G-7,62
PCV 5/ 4-G-7,62
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V，最大反向电0μA的硅外延平面型齐纳二极管)
From old datasheet system
Silicon Epitaxial Planar Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| IZF1167-7F25 IZF1167-3F25 IZF1167-12F25 IZF1167-10 |
2390 A, 700 V, SCR
2390 A, 300 V, SCR
2390 A, 1200 V, SCR
2390 A, 1000 V, SCR
2390 A, 900 V, SCR
1470 A, 800 V, SCR
1950 A, 1000 V, SCR
1950 A, 1100 V, SCR
1370 A, 1400 V, SCR
1470 A, 500 V, SCR
2835 A, 1100 V, SCR
1370 A, 1200 V, SCR
1470 A, 200 V, SCR
|
ITT, Corp.
|
| D390CH18E3L2 D390CH18E3L3 D390CH18E3L4 D390CH18E3L |
2426 A, 1800 V, SCR
1125 A, 1200 V, SCR, TO-200AB
1950 A, 800 V, SCR, TO-200AC
5087 A, 1600 V, SCR
5087 A, 1800 V, SCR
2749 A, 1800 V, SCR
2749 A, 800 V, SCR
2110 A, 3000 V, SCR
2749 A, 600 V, SCR
1895 A, 1000 V, SCR, TO-200AC
2268 A, 1200 V, SCR
5260 A, 1200 V, SCR
1690 A, 800 V, SCR, TO-200AC
2749 A, 1600 V, SCR
5260 A, 1600 V, SCR
2749 A, 1000 V, SCR
1765 A, 1200 V, SCR, TO-200AC
1765 A, 1600 V, SCR, TO-200AC
2749 A, 1200 V, SCR
2749 A, 400 V, SCR
1030 A, 800 V, SCR, TO-200AB
1715 A, 600 V, SCR, TO-200AC
3140 A, 600 V, SCR
2600 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| KTX401E |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING) 平面PNP晶体管外延硅外延平面型二极管（通用，超高速开关）
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| KRC109S KRC107S KRC108 KRC108S KRC107 |
(KRC107S - KRC109S) EPITAXIAL PLANAR PNP TRANSISTOR
EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
EPITAXIAL PLANAR NPN TRANSISTOR
|
KEC[KEC(Korea Electronics)]
|
| FT500DL FT500DL-24 FT500DL-4 FT500DL-20 FT500DL-16 |
Phase control SCR. 500A, 400V.
Phase Control SCR 500 Amperes Avg 200-1400 Volts
Phase control SCR. 500A, 1200V.
Phase control SCR. 500A, 200V.
Phase control SCR. 500A, 1000V.
Phase control SCR. 500A, 800V.
Phase control SCR. 500A, 300V.
Phase control SCR. 500A, 500V.
Phase control SCR. 500A, 600V.
Phase control SCR. 500A, 1400V.
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
|
| BRY62 |
Silicon controlled switch
Silicon Planar PNPN switch(硅平B>PNPN开
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 2SC2078 |
NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier Applications
PNP Epitaxial Planar Silicon Transistors
|
Sanyo
|
| 2SD613 2SB633 |
Epitaxial Planar Silicon Transistor 85V/6A, AF 25 to 35W Output Applications
PNP/NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
| 2SC2314 |
PNP Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistor 27MHz CB Transceiver Driver Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| TGF148-600B TGF148-1200B TGF148-800B TGF148-1000B |
63 A, 600 V, SCR, TO-65
63 A, 1200 V, SCR, TO-65
63 A, 800 V, SCR, TO-65
63 A, 1000 V, SCR, TO-65
|
ST Microelectronics
|
| KRC281M KRC286M KRC282M KRC283M KRC284M KRC285M |
CAP, TANT, 100UF, 10%, 16V, E
Built in Bias Resistor
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
(KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
|
KEC Holdings
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
|
