| PART |
Description |
Maker |
| PH3230S PH3230S115 |
N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA
N-channel TrenchMOS logic level FET
N-channel TrenchMOS⑩ logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2SK2219 1026 2SK2219-21 2SK2219-23 |
1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用（应用于电容器话筒沟道结型场效应管
From old datasheet system
N-Channel Junction Silicon FET
|
Sanyo Electric Co., Ltd.
|
| 2SK2141 K2141 2SK2141JM |
N-channel enhancement type DMOS FET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| FJZ594JC FJZ594J FJZ594JB FJZ594JBTF FJZ594JTF FJZ |
Silicon N-Channel Junction FET
Si N-channel Junction FET 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| D1209UK D1209 |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-400MHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-400MHz,推挽)
|
TT electronics Semelab, Ltd.
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| 2SJ555 |
0.036 ohm, POWER, FET
Silicon P-Channel MOS FET
|
Hitachi Semiconductor
|
| 2SJ178 2SJ178-T 2SJ178-T/JD 2SJ178-T/JM |
P-channel power MOS FET
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| NE76184A-T1A NE76184A-SL NE76184A NE76184A-T1 NE76 |
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
http://
|
