PART |
Description |
Maker |
DESD1LIN2WSQ-7 DESD1LIN2WSQ |
CAN BUS ESD PROTECTION DIODE LIN-BUS BIDIRECTIONAL TVS DIODE
|
Diodes Incorporated
|
PESD1LIN PESD1LIN-115 |
LIN-bus ESD protection diode ESD protection of one automotive LIN-bus line
|
NXP Semiconductors
|
PESD1CAN-U |
CAN bus ESD protection diode
|
NXP Semiconductors
|
PESD1FLEX |
FlexRay bus ESD protection diode
|
NXP Semiconductors
|
CPDFR12V-HF CPDFR12V0-HF CPDFR24V0-HF CPDFR5V0-HF |
Halogen Free ESD Diodes, V-C=15V, V-ESD=8kV Halogen Free ESD Diodes, V-C=47V, V-ESD=8kV Halogen Free ESD Diodes, V-C=25V, V-ESD=8kV SMD ESD Protection Diode
|
Comchip Technology
|
CPDVR085V0UA-HF |
Halogen Free ESD Array, V-C=9.8V, V-PV=20kV, V-BD=6V SMD ESD Protection Diode
|
Comchip Technology
|
74F1071MSAX |
18-Bit Undershoot/Overshoot Clamp and ESD Protection Device; Package: SSOP; No of Pins: 20; Container: Tape & Reel 18-LINE DIODE BUS TERMINATION ARRAY, PDSO20
|
Fairchild Semiconductor, Corp.
|
ESD9X3.3S ESD9X3.3ST5 ESD9X5.0ST5 |
ESD Protection Diodes(ESD淇??浜??绠? ESD Protection Diodes(ESD保护二极 ESD保护二极管(防静电保护二极管 ESD Protection Single Diode In Ultra Small SOD-923 Package
|
ON Semiconductor ONSEMI
|
P6KE39A P6KE9.1CA P6KE51CA P6KE300A P6KE300CA P6KE |
16-Bit Bus Transceivers and Registers with 3-State Outputs 56-SSOP -40 to 85 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15 RF Down-Converter 20-QFN 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15 Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15 Presettable Synchronous 4-Bit Up/Down Binary Counters 16-SOIC -40 to 85 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15 2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP 0 to 70 600 Watt Transient Voltage Suppressors
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] Microsemi
|
DF3A5.6FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.34 to 14.98; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.34 to 14.98; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
DF3A3.6FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|