| PART |
Description |
Maker |
| S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| STP9N65M2 STD9N65M2 STF9N65M2 |
Extremely low gate charge
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| STF5N52K3 |
N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET
|
STMicroelectronics
|
| STD11N65M2 STP11N65M2 STU11N65M2 |
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
|
ST Microelectronics
|
| STP9N60M2 STD9N60M2 |
Extremely low gate charge
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| STD7N80K5 STU7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
|
ST Microelectronics
|
| STW57N65M5 STI57N65M5 STP57N65M5 STB57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in D2PAK package
N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP and D2PAK packages
|
ST Microelectronics
STMicroelectronics
|
| IRFP23N50LPBF |
23 A, 500 V, 0.235 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190ヘ , Trr typ. = 170ns , ID = 23A )
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190Ω , Trr typ. = 170ns , ID = 23A )
|
International Rectifier
|
| STF15N65M5 STP15N65M5 STFI15N65M5 |
N-channel 650 V, 0.308 Ohm, 11 A MDmesh(TM) V Power MOSFET in I2PAKFP package
N-channel 650 V, 0.308 ohm typ., 11 A MDmesh V Power MOSFET
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
|
ST Microelectronics
STMicroelectronics
|
| STH240N10F7-2 STH240N10F7-6 |
Ultra low on-resistance
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-6 package
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| SKDH116_12-L100 SKDH116_16-L100 SKDH116 SKDH116/12 |
MOSFET; ID (A): 0.02; VDS (V): 6; Pch : 0.1; |yfs| (S) typ: 0.024; PG (dB) typ: 24; Ciss (pF) typ: 1.75; NF (dB) typ: 1.5; IDSS (mA): -; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
