| PART |
Description |
Maker |
| TC58NVG0S3HTAI0 |
SLC NAND
|
TOSHIBA
|
| TC58NVG2S0HTAI0 |
SLC NAND
|
TOSHIBA
|
| TH58NVG3S0HTA00 |
SLC NAND
|
TOSHIBA
|
| TC58NVG3S0FTA00 |
SLC NAND
|
TOSHIBA
|
| TC58NVG2S0FTAI0 |
SLC NAND
|
TOSHIBA
|
| TC58NVG2S0HBAI4 |
SLC NAND
|
TOSHIBA
|
| S34ML01G1 S34ML04G1 S34ML02G1 |
(S34ML01G1 - S34ML04G1) SLC NAND Flash Memory
|
Spansion
|
| NAND512R3A2SN6F |
512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories
|
Numonyx B.V
|
| MVI46-MCM |
SLC Platform / Modbus Communication Module
|
Prosoft
|
| M38510/02006BAB M38510/02006BAA M38510/02002BDB M3 |
CERAMIC CHIP/MIL-PRF-55681
Triple 3-input NAND Gate 3输入与非
Quad 2-input NAND Gate 输入与非
Single 8-input NAND Gate 输入与非
Dual 4-input NAND Gate 输入与非
Triple 3-input NAND Gate 输入与非
Dual 4-input NAND Gate 4输入与非
|
ITT, Corp.
Astrodyne, Inc.
Ecliptek, Corp.
Electronic Theatre Controls, Inc.
Bourns, Inc.
Newhaven Display International, Inc.
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| 74ABT20D-T 74ABT20DB118 |
Dual 4-input NAND gate - Description: Dual 4-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.7 ns; Voltage: 4.5-5.5 V ABT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
|
Ecliptek, Corp.
NXP SEMICONDUCTORS
|
