| PART |
Description |
Maker |
| PH1920-90 |
Circular Connector; No. of Contacts:6; Series:TVS06; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:11-98 无线功率晶体90瓦，1930-1990兆赫
Wireless Power Transistor 90 Watts 1930-1990 MHz
Wireless Power Transistor 90 Watts, 1930-1990 MHz
|
MACOM[Tyco Electronics]
|
| PHI920-33 PH1920-33 |
Low Power Zero-Drift Operational Amplifier with Internal Capacitors; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz
Wireless Bipolar Power Transistor/ 33W 1930 - 1990 MHz
|
Tyco Electronics
|
| AGR19180EF |
180 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| MAFRIN0540 |
Single Junction Drop-In Circulator 1930 MHz-1990 MHz
|
M/A-COM Technology Solutions, Inc.
|
| MADCSM0001TR MADCSM0001 MADCSM0001SMB |
Dual-Band/Triple-Mode Downconverter 869 - 893 MHz and 1930 - 1990 MHz
|
MACOM[Tyco Electronics]
|
| FR12-0004 FR11-0004 |
3- Port DROP - IN CIRCULATOR / ISOLATOR 1930 - 1990 MHz
|
MACOM[Tyco Electronics]
|
| MHW1915D |
MHW1915 1930-1990 MHz, 15 W, 26 V, 31 dB, RF Microwave Bipolar Power Amplifier - Archived
|
Motorola
|
| PTF191601 PTF191601E |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz
LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTFB192503EL PTFB192503FL |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz
|
Infineon Technologies AG
|
| MRF7S19100N |
1930?1990 MHz, 29 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs
From old datasheet system
|
Motorola Semiconductor Products
|
| MRF5S19150H MRF5S19130HR306 MRF5S19130HSR3 MRF5S19 |
RF Power Field Effect Transistors
MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
