PART |
Description |
Maker |
40RIF120W 50RIF120W 40RIF100W 50RIF100W |
V(rrm): 1200V; 40A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers V(rrm): 1200V; 50A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers V(rrm): 1000V; 40A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers V(rrm): 1000V; 50A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers
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International Rectifier
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Q6040M9 Q7040M9 Q4040M9 Q2040M9 Q8040M9 Q5040M9 Q2 |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-218 TRIAC|700V V(DRM)|40A I(T)RMS|TO-218 TRIAC|800V V(DRM)|40A I(T)RMS|TO-218 TRIAC|500V V(DRM)|40A I(T)RMS|TO-218 TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|700V V(DRM)|15A I(T)RMS|TO-220 可控硅| 700V的五(DRM)的| 15A条口(T)的有效值|20 TRIAC|400V V(DRM)|15A I(T)RMS|TO-220 TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 TRIAC|800V V(DRM)|25A I(T)RMS|TO-220
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Motorola Mobility Holdings, Inc.
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Z88C00-20VSC Z88C00-25VEC Z88C00-20VEC Z88C01-25VE |
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA; Holding Current:35mA RoHS Compliant: Yes Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:100mA; Package/Case:3-TO-218X; Current, It av:40A; Gate Trigger Current Max, Igt:100mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Holding Current:50mA; Leaded Process Compatible:Yes RoHS Compliant: Yes Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:4A; Holding Current:30mA Microcontroller 微控制器 Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:100mA; Package/Case:3-TO-218; Current, It av:40A; Gate Trigger Current Max, Igt:100mA 8位微控制
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Maxim Integrated Products, Inc.
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X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http:// INTERSIL[Intersil Corporation] Intersil, Corp.
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NGTB40N120IHLW |
IGBT 1200V 40A FS1 Induction Heating
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ON Semiconductor
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40HA40 40HA60 40HFR20 40HFR80 40HA140 40HF140 40HF |
STANDARD RECOVERY DIODES 800V 40A Std. Recovery Diode in a DO-203AB (DO-5)package 1400V 40A Std. Recovery Diode in a DO-203AB (DO-5)package 1000V 40A Std. Recovery Diode in a DO-203AB (DO-5)package 1600V 40A Std. Recovery Diode in a DO-203AB (DO-5)package 100V 40A Std. Recovery Diode in a DO-203AB (DO-5)package 1200V 40A Std. Recovery Diode in a DO-203AB (DO-5)package Trimmer Capacitor Solder Mount STANDARD RECOVERY DIODES 标准恢复二极 Trimmer Capacitor 标准恢复二极
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http:// International Rectifier, Corp.
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STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP150 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66 Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66
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J650-1 J650-10FS |
6.6A Iout, 2.5kV Vrrm General Purpose Silicon Rectifier 2.0A Iout, 5.0kV Vrrm Fast Recovery Rectifier
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RPM Micro
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NTE5548 NTE5541 NTE5545 |
Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A. Silicon Controlled Rectifier (SCR) 35 Amp
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NTE[NTE Electronics]
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CM50TU-24H |
MEDIUM POWER SWITCHING USE INSULATED TYPE IGBT Modules:1200V
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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350PEQ50W 350PEQ90W 350PEQ60W 350PEQ110W 350PEQ100 |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1100V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1000V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
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International Rectifier
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CM50DY-24H |
MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型 IGBT Modules:1200V
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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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