| PART |
Description |
Maker |
| ASI10523 ASI1002 |
NPN Silicon RF Power Transistor Designed for General Purpose Class C Power Amplifier up to 1500 MHz(Ic: 200mA ,Vcc: 35 V)(NPN 纭??灏??????朵?绠??ㄤ????C绾ф?澶у?,棰??杈?500 MHz(Ic:200mA ,Vcc: 35 V))
|
ADVANCED SEMICONDUCTOR INC
|
| MAX562 |
Complete 230kbps, 2.7V to 5.25V
Serial Interface for Notebook Computers(2.7~5.25V,230kbps,高速RS-232串行
|
Maxim Integrated Products, Inc.
|
| FC0.7-18-05LT FC0.7-18-05L2 FC0.7-18-05LT2 FC0.7-1 |
SWITCH TOGGLE SPDT ON-ON
SWITCH TOGGLE SPDT PC MNT 5PCS
SWITCH TOGGLE SPDT R/A PCB .4VA
SWITCH ROCKER W/BRKT SPDT .460H
SWITCH SLIDE MINI DPDT VBRKT GLD
SWITCH PUSHWHEEL BCD DEC #0-9 BK
SWITCH THUMBWHEEL BCD FRNT MT BK
SWITCH SLIDE MINI SPDT PNLMT G/S
SWITCH SLIDE MINI SPDT VBRKT GLD
SWITCH PUSHWHL BCD DEC 0-9 BLACK
SWITCH PUSHWHEEL BCD DEC 0-9 BLK
SWITCH DOOR INTERLOCK SPDT 15A
SWITCH THUMBWHEEL BCD REAR MT BK
SWITCH ROCKER SPDT 5A SOLDER BK
SWITCH TOGGLE SPDT VERT R/A PCB 模拟IC
Analog IC 模拟IC
DPDT 240V, 2 A SLIDE SWITCH 模拟IC
|
TE Connectivity, Ltd.
ITT, Corp.
NTE Electronics, Inc.
ON Semiconductor
Panasonic, Corp.
|
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| HCF40192B HCF40192BC1 HCF40192BEY HCF40192BF HCF40 |
Quadruple Differential Line Receiver 16-SOIC 0 to 70 预置向上/向下计数器（双时钟带复位0192B BCD码型40193B BINARY类型
PRESETTABLE UP/DOWN COUNTERS (DUAL CLOCK WITH RESET) 40192B ? BCD TYPE 40193B ? BINARY TYPE
PRESETTABLE UP/DOWN COUNTERS (DUAL CLOCK WITH RESET) 40192B BCD TYPE 40193B BINARY TYPE
PRESETTABLE UP/DOWN COUNTERS (DUAL CLOCK WITH RESET) 40192B-BCD TYPE , 40193B-BINARY TYPE
PRESETTABLE UP/DOWN COUNTERS - 40192B BCD TYPE 40193B BINARY TYPE
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| ISL60002BIB812 ISL60002CIH325 ISL60002CIH312 ISL60 |
Precision 1.25V & 2.50V Low Voltage FGA References(绮惧?1.25V涓?.50V浣????GA?哄?)
Precision 1.25V & 2.50V Low Voltage FGA References
Precision 1.25V & 2.50V Low Voltage FGA References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 1.25 V, PDSO3
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:6; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle; Body Style:Straight
Precision 1.25V & 2.50V Low Voltage FGA References
|
Intersil, Corp.
Intersil Corporation
|
| MC14511B-D MC14511BDWR2 MC14511BF MC14511BFEL |
BCD-To-Seven Segment Latch/Decoder/Driver
BCD/7 Segment LAT/Decoder/Driver
|
ON Semiconductor
|
| DAC20CP DAC20 DAC20CQ |
2 - DIGIT BCD HIGH - SPEED MULTIPLYING D / A CONVERTER ( UNIVERSAL DIGITAL LOGIC INTERFACE )
2 Digit BCD High Speed Multiplying D/A Converter
|
List of Unclassifed Manufacturers
ETC
Precision Monolithics
|
| CD4553 MC14553B-D |
3-Digit BCD Counter
(MC14553B) 3 Digit BCD Counter
|
ON Semiconductor
|
| 28F002BV-T E28F002BV-B80 |
2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory family. Access speed Vcc=5V, voltage options (Vpp/Vcc) V=(5 or 12 / 3.3 or 5)
|
Intel
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| M4-128/64-18VI M4-128/64-18YI M4-128N/64-18JI M4LV |
High Performance E 2 CMOS In-System Programmable Logic
High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 128 macrocells, 64 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 5V Vcc, 128 macrocells, 64 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 192 macrocells, 96 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 5V Vcc, 256 macrocells, 128 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 256 macrocells, 128 I/Os, 14ns
|
Lattice Semiconductor
|
