| PART |
Description |
Maker |
| STW9B12G |
Thermally Enhanced Package Design
|
Seoul Semiconductor
|
| NPT25015 NPT25015-15 |
Gallium Nitride 28V, 23W RF Power Transistor
Thermally-enhanced industry standard package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| STW7C2SA |
Thermally Enhanced Package Design
|
Seoul Semiconductor
|
| PTFA041501GL PTFA041501HL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Infineon Technologies AG
|
| PXAC180602MD-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA092201FV4R0XTMA1 PTFA092201E PTFA092201EF PTFA |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
| PXFC191507FC |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA260451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
| PTFB090901FA PTFB090901EA |
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz
|
Infineon Technologies AG
|
| PTFA211801E PTFA211801F |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTFA181001GL PTFA181001HL |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
