PART |
Description |
Maker |
BAT15-03W Q62702-A1104 |
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
PHT41470B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
INA-54063-BLK |
3.0 GHz Low Noise Silicon MMIC Amplifier
|
Agilent(Hewlett-Packard...
|
AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
AT41485 AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
INA-50311 INA-50311-BLK INA-50311-TR1 |
1 GHz的硅单片低噪声放大器 1 GHz Low Noise Silicon MMIC Amplifier
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] http://
|
BAT15-099 BAT1599 Q62702-A66 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MAAM12021 MAAM12021RTR MAAM12021SMB MAAM12021TR |
1.5-1.6 GHz, low noise amplifier Low Noise Amplifier 1.5 - 1.6 GHz GT 35C 7#12,28#16 SKT RECP
|
MA-Com MACOM[Tyco Electronics]
|
UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC Corp.
|
UPC2713T-E3 UPC2713T |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
Duracell NEC[NEC]
|
PE3240 PE3240EK 3240-11 3240-12 3240-00 |
2.2 GHz UltraCMOS⑩ Integer-N PLL for Low Phase Noise Applications 2.2 GHz UltraCMOSInteger-N PLL for Low Phase Noise Applications 2.2 GHz UltraCMOS Integer-N PLL for Low Phase Noise Applications
|
PEREGRINE[Peregrine Semiconductor Corp.]
|