| PART |
Description |
Maker |
| IGW30N60H3 |
High speed IGBT IN Trench and Fieldstop technology
|
Infineon Technologies AG
|
| IKP20N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies A...
|
| STGP15H60DF |
Trench gate field-stop IGBT, H series 600 V, 15 A high speed
|
ST Microelectronics
|
| STGW40V60DLF |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
|
ST Microelectronics
|
| STGW40H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
|
ST Microelectronics
|
| STGB30V60DF STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
|
ST Microelectronics
|
| IKW15N120H3 |
High speed Duopack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
|
http://
|
| STGB30H60DF STGF30H60DF STGP30H60DF STGW30H60DF |
Low thermal resistance
600 V, 30 A high speed trench gate field-stop IGBT
|
STMicroelectronics
ST Microelectronics
|
| IXGP16N60C2D1 IXGA16N60C2 |
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
IXYS, Corp.
|
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| IXSP10N60B2D1 IXSA10N60B2D1 |
High Speed IGBT with Diode 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
