PART |
Description |
Maker |
IDW20G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
MS20 |
MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor
|
AVX Corporation
|
KIA7812API KIA7805API KIA7807API KIA7806API KIA780 |
BIPOLAR LINEAR INTEGRATED CIRCUIT SEMICONDUCTOR SEMICONDUCTOR
|
KEC(Korea Electronics)
|
GVT7364A16 7364A16S |
REVOLUTIONARY PINOUT 64K X 16 From old datasheet system
|
Galvantech
|
GVT72128A8 72128A8S |
REVOLUTIONARY PINOUT 128K X 8 From old datasheet system
|
Galvantech
|
SPP20N65C3 SPI20N65C3 SPP20N65C307 SPA20N65C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220
|
Infineon Technologies AG
|
IS63LV1024-12T |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
|
Integrated Silicon Solution, Inc
|
SPA07N60C3 SPI07N60C3 SPP07N60C3 SPP07N60C307 |
New revolutionary high voltage technology Ultra low gate charge
|
Infineon Technologies AG
|
EDI8F82046C |
2 Megabits x 8 Static RAM CMOS, Module with Revolutionary Pinout(2Mx8 CMOS静态RAM模块)
|
White Electronic Designs Corporation
|
SPB04N60S5 SPB04N60S507 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP04N60S5 SPP04N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|